A micro-structured device that can improve sensitivity and signal-to-noise for electronic sensor materials is embedded in electrically resistive materials. The technology includes a three-dimensional embedded electrode structure and fabrication methods for making the device for electronic sensing in bulk resistive materials. Embedded electrode structures address issues in conventional sensors by allowing independent control of sensitive material thickness, area, electric field intensity, and field direction.
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|STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.