Electroplated Au for conformal coating of high aspect ratio silicon structures
| DWPI Title: X-ray system for use with e.g. deep reactive-ion etching silicon grating for x-ray imaging, has electroplated metallic layer formed on seed layer, formed of x-ray absorbing material and uniformly and conformally coating gratings |
| Abstract: A method for electroplating a nonmetallic grating including providing a nonmetallic grating; performing an atomic layer deposition (ALD) reaction to form a seed layer on the nonmetallic grating; and electroplating a metallic layer on the seed layer such that the metallic layer uniformly and conformally coats the nonmetallic grating. An apparatus including a silicon substrate having gratings with an aspect-ratio of at least 20:1; a atomic layer deposition (ALD) seed layer formed on the gratings; and an electroplated metallic layer formed on the seed layer, wherein the electroplated metallic layer uniformly and conformally coats the gratings. |
| Use: X-ray system for use with a grating e.g. nonmetallic grating such as deep reactive-ion etching (DRIE) silicon grating, for optics applications i.e. x-ray imaging. |
| Advantage: The system provides pressure drop to create a pulling effect, which effectively pulls precursor vapor into an ALD chamber, thus facilitating transfer of precursor to the ALD chamber. |
| Novelty: The system has a detector configured to detect x-rays. The detector comprises a silicon substrate including gratings (100) with an aspect-ratio of 20:1. An atomic layer deposition (ALD) seed layer (106) is formed on the gratings. An electroplated metallic layer (108) is formed on the seed layer. The electroplated metallic layer is formed of an x-ray absorbing material e.g. gold, and uniformly and conformally coats the gratings, where a spacing between the gratings is 5 microns or less. The seed layer is formed of platinum or palladium, where a thickness of the metallic layer is from 0.25 microns to 1.2 microns. |
| Filed: 10/30/2018 |
| Application Number: US16174744A |
| Tech ID: SD 12227.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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