Communication device and method of making the same
| DWPI Title: Communication device for receiving interrogation signal at first carrier frequency and for transmitting response signal, has tantalum nitride layer over second silicon dioxide layer, and third platinum layer over tantalum nitride layer |
| Abstract: A communication device for receiving an interrogation signal at a first carrier frequency and for transmitting a response signal at a second carrier frequency is disclosed. The interrogation signal comprises the first carrier frequency modulated at the second carrier frequency. The communication device includes a sensor coupled to a demodulator. The sensor receives a low frequency input used to further modulate the interrogation signal. The demodulator demodulates the low frequency input from the first carrier frequency to thereby generate the response signal comprising the second carrier frequency and the low frequency input. The demodulator preferably includes a pyroelectric demodulator, a piezoelectric demodulator, or a detector diode. The demodulator preferably has a frequency response less than the first carrier frequency but greater than the second carrier frequency. |
| Use: Communication device for receiving interrogation signal at first carrier frequency and for transmitting response signal at second carrier frequency. |
| Advantage: The separating receive and transmit frequencies prevents the re-transmitted signal from being overpowered by the much stronger originally transmitted signal. The wide separation that is achieved between input and output frequencies allows a reception of a weak return signal while simultaneously sending a strong transmitted signal. |
| Novelty: The communication device has a sensor coupled to a demodulator, where the demodulator comprises a pyroelectric demodulator, and a low-pass filter coupled to the demodulator. The pyroelectric demodulator includes a first silicon dioxide layer over a silicon substrate, a zinc oxide layer over the first silicon dioxide layer. A first platinum layer is placed over the zinc oxide layer, a lead zirconate titanate (PZT) layer over the first platinum layer, and a second platinum layer (610) over the PZT layer. A tantalum nitride layer is placed over the second silicon dioxide layer, a third platinum layer (615) over the tantalum nitride layer, and a layer over the third platinum layer. The layer over the third platinum layer comprises one of gold, nickel, or titanium. The layer comprises one of zinc oxide or titanium dioxide (TiOx) over the layer that comprises silicon. The layer over the second layer comprises tantalum or tantalum nitride. |
| Filed: 11/1/2016 |
| Application Number: US15340674A |
| Tech ID: SD 13856.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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