Circuit arrangement and technique for setting matrix values in three-terminal memory cells
| DWPI Title: Method for changing effective resistances of cells in array of three-terminal memory cells, involves applying respective column programming signals in parallel to some of columns while applying row programming signals to some of rows |
| Abstract: A method for programming substantially simultaneously more than one of the three-terminal memory cells that represent the values of a matrix to be multiplied by a vector is disclosed. Programming may be achieved by controlling the gate-drain voltage for more than one cell simultaneously to change each such cell's physical state and hence its effective resistance. Illustratively, the gates of each row of the cells corresponding to the matrix are coupled together and each coupled row is coupled to a respective controllable voltage source while the drains of each column of the cells of the matrix are coupled together and each coupled column is coupled to a respective controllable voltage source. The controllable voltage sources are arranged so that at the intersection of a row and a column, a cell experiences one of three conditions: increase effective resistance, decrease effective resistance, or substantially no change. |
| Use: Method for changing effective resistances of cells in an array of three-terminal memory cells. |
| Advantage: The method enables accelerating programming of the array relative to a procedure, in which each cell is written individually. |
| Novelty: The method involves applying matrix-write operation to program an array of three-terminal memory cells (101-1) with a desired state matrix value. Respective row programming signals are applied in parallel to some of rows in the matrix-write operation. Respective column programming signals are applied in parallel to some of columns while applying the row programming signals, where the matrix-write operation supplies a threshold voltage greater in absolute value than a programming threshold across a gate and a terminal of each of two of cells at same time to change physical states of cells simultaneously. |
| Filed: 9/21/2018 |
| Application Number: US16137758A |
| Tech ID: SD 14538.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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