Avalanche diode having reduced dark current and method for its manufacture

Patent Number: 9,748,429
Issued: 8/29/2017
Official Filing: View the Complete Patent
Abstract: An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region.
Filed: 9/30/2015
Application Number: 14/870,195
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.