Avalanche diode having reduced dark current and method for its manufacture
| Patent Number: | 9,748,429 |
| Issued: | 8/29/2017 |
| Official Filing: | View the Complete Patent |
| Abstract: | An avalanche diode includes an absorption region in a germanium body epitaxially grown on a silicon body including a multiplication region. Aspect-ratio trapping is used to suppress dislocation growth in the vicinity of the absorption region. |
| Filed: | 9/30/2015 |
| Application Number: | 14/870,195 |
| Government Interests: | STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |