| Abstract: A temperature stable (color and efficiency) III-nitride based amber (585
nm) light-emitting diode is based on a novel hybrid nanowire-planar
structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum
well LED structures with high indium content and high material quality.
The high efficiency and temperature stable direct yellow and red
phosphor-free emitters enable high efficiency white LEDs based on the
RGYB color-mixing approach. |
| Filed: 1/17/2013 |
| Application Number: 13/743438 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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