Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films

Patent Number: 7,915,626
Issued: 3/29/2011
Official Filing: View the Complete Patent
Abstract: A denticulated Group III nitride structure that is useful for growing Al.sub.xGa.sub.1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density.
Filed: 8/15/2006
Application Number: 11/504,885
Government Interests: STATEMENT OF GOVERNMENT INTEREST This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.