Aluminum nitride transitional layer for reducing dislocation density and cracking of AIGan epitaxial films
| DWPI Title: Structure for growing aluminum-gallium nitride used for e.g. photodetector, has substrate, denticulated nitride layer containing denticles which are provided closely such that adjacent denticles contact, and nitride layer |
| Abstract: A denticulated Group III nitride structure that is useful for growing AlxGa1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density. |
| Use: Structure is used for growing aluminum-gallium nitride for ultraviolet-emitting photonic device, photodetector and transistor. |
| Advantage: The aluminum-gallium nitride is efficiently grown without cracking and with reduced threading dislocation density, using the structure. |
| Novelty: A group IIII nitride structure has a substrate (1), a denticulated group III nitride layer (2), and a group III nitride layer (4) on top of denticulated group III nitride layer. The denticles of denticulated group III nitride layer are conical shaped, and are provided closely together such that the adjacent denticles contact. The group III nitride layer comprises high-temperature group III nitride layer having dislocation-interaction zone epitaxially on the denticulated group III nitride layer and a lower-threading-dislocation-density layer epitaxially on the dislocation-interaction zone. |
| Filed: 8/15/2006 |
| Application Number: US2006504885A |
| Tech ID: SD 10191.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Data from Derwent World Patents Index, provided by Clarivate All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |