| Abstract: An optical XOR gate is formed as a photonic integrated circuit (PIC) from
two sets of optical waveguide devices on a substrate, with each set of
the optical waveguide devices including an electroabsorption modulator
electrically connected in series with a waveguide photodetector. The
optical XOR gate utilizes two digital optical inputs to generate an XOR
function digital optical output. The optical XOR gate can be formed from
III-V compound semiconductor layers which are epitaxially deposited on a
III-V compound semiconductor substrate, and operates at a wavelength in
the range of 0.8-2.0 .mu.m. |
| Filed: 12/20/2010 |
| Application Number: 12/973470 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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