Weak-link capacitor
| DWPI Title: Making weak-link capacitor used in e.g. display involves preparing precursor polymer; casting precursor polymer onto multiple individual substrates as thin films; forming capacitor by stacking thin films and metalizing stack of thin films |
| Abstract: A process for making a dielectric material where a precursor polymer selected from poly(phenylene vinylene) polyacetylene, poly(p-phenylene), poly(thienylene vinylene), poly(1,4-naphthylene vinylene), and poly(p-pyridine vinylene) is energized said by exposure by radiation or increase in temperature to a level sufficient to eliminate said leaving groups contained within the precursor polymer, thereby transforming the dielectric material into a conductive polymer. The leaving group in the precursor polymer can be a chloride, a bromide, an iodide, a fluoride, an ester, an xanthate, a nitrile, an amine, a nitro group, a carbonate, a dithiocarbamate, a sulfonium group, an oxonium group, an iodonium group, a pyridinium group, an ammonium group, a borate group, a borane group, a sulphinyl group, or a sulfonyl group. |
| Use: For making weak-link capacitor (claimed), useful in e.g. electronics, display and energy industries. |
| Advantage: By employing thermo-converting capacitor dielectrics in electronics, capacitors can be effectively shut down in the event of a fire or overheating, providing a fundamental safety mechanism in electronic devices. |
| Novelty: Making weak-link capacitor involves preparing precursor polymer selected from poly(phenylene vinylene), polyacetylene, poly(p-phenylene), poly(thienylene vinylene), poly(1,4-naphthylene vinylene), and polyp-pyridine vinylene), where precursor polymer comprising leaving group; casting the precursor polymer onto multiple individual substrates as thin films; forming a capacitor by stacking the thin films using an offset technique; and metalizing at least one end of the stack of thin films and attaching a contact to make a weak-link capacitor. |
| Filed: 9/28/2010 |
| Application Number: US2010892055A |
| Tech ID: SD 11714.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Data from Derwent World Patents Index, provided by Clarivate All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |