Die singulation method and package formed thereby
| DWPI Title: Method for singulating die from substrate of semiconductor device e.g. micro electromechanical system (MEMS) device, involves attaching handle wafer to bottom side of substrate, and etching away sacrificial layer for singulating die |
| Abstract: A method is disclosed for singulating die from a substrate having a sacrificial layer and one or more device layers, with a retainer being formed in the device layer(s) and anchored to the substrate. Deep Reactive Ion Etching (DRIE) etching of a trench through the substrate from the bottom side defines a shape for each die. A handle wafer is then attached to the bottom side of the substrate, and the sacrificial layer is etched to singulate the die and to form a frame from the retainer and the substrate. The frame and handle wafer, which retain the singulated die in place, can be attached together with a clamp or a clip and to form a package for the singulated die. One or more stops can be formed from the device layer(s) to limit a sliding motion of the singulated die. |
| Use: Method for singulating die from substrate of semiconductor device e.g. integrated circuit (IC), microprocessor, micro electromechanical system (MEMS) device, microfluidic device, and sensor. |
| Advantage: The die is formed from the substrate by trenches which are etched by deep reactive ion etching (DRIE) process, so that shape of each die is determined by trenches. The method can handle multiple dies as the die is to be picked up only once when they are removed from the handle wafer, thus generation of particles that contaminate the device is reduced. The dies are trapped between frame and handle wafer after singulating the die, so that the dies are processed in parallel fashion, thus time consumption and cost are reduced. |
| Novelty: The method involves providing a substrate (10) in combination with device layer to form a frame (14) of the die after singulation of the die, and with retainer that extends over a second portion of substrate. A trench is etched into bottom side of substrate to define a shape for die after singulating the die. The etching is terminated in proximate side of sacrificial layer. A handle wafer (18) is attached to bottom side of substrate. A sacrificial layer is etched away to singulate the die. The singulated die is retained inside of frame which is attached to handle wafer. |
| Filed: 4/13/2010 |
| Application Number: US2010758833A |
| Tech ID: SD 11465.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Data from Derwent World Patents Index, provided by Clarivate All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |