Strained layer superlattice focal plane array having a planar structure
| DWPI Title: Fabricating infrared focal plane array photodetector, comprises epitaxially growing many III-V compound semiconductor layers on gallium antimonide substrate, electrically isolating photodetector element and depositing electrodes |
| Abstract: An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and InxGa1-xSb with 0≰x≰0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 μm. |
| Use: The method is useful for fabricating an infrared focal plane array photodetector having a two-dimensional array of photodetector elements which is used to form an image of a scene of view captured via the infrared light. |
| Advantage: The method: avoids a need for epitaxial re-growth which is complicated and time consuming; and provides a infrared focal plane array photodetector which avoids the utilization of a mesa structure to isolate photodetector element resulting in a substantially planar structure and reduces or eliminates surface recombination. |
| Novelty: Fabrication of infrared focal plane array photodetector (10) having two-dimensional array of photodetector elements (12), comprises: epitaxially growing many III-V compound semiconductor layers on gallium antimonide substrate with III-V compound semiconductor layers including buffer layer (28), strained-layer superlattice (30) and contact layer (36); electrically isolating photodetector element; depositing electrode above contact layer to electrically contact photodetector element in two-dimensional array of photodetector elements; and depositing another electrode proximate to substrate. |
| Filed: 6/15/2010 |
| Application Number: US2010815714A |
| Tech ID: SD 10366.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Data from Derwent World Patents Index, provided by Clarivate All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |