Aluminum nitride transitional layer for reducing dislocation density and cracking of AlGaN epitaxial films
| DWPI Title: Growing a Group III nitride structure for growing aluminum gallium nitride epitaxial film by growing denticulated Group III nitride layer, and growing reduced-dislocation-density Group III nitride layer atop denticulated nitride layer |
| Abstract: A denticulated Group III nitride structure that is useful for growing AlxGa1-xN to greater thicknesses without cracking and with a greatly reduced threading dislocation (TD) density. |
| Use: Method of growing a Group III nitride structure useful for growing aluminum gallium nitride (Al x Ga 1-x N) epitaxial film. |
| Advantage: Al x Ga 1-x N can be grown to greater thicknesses without cracking and with reduced threading dislocation density. |
| Novelty: Growing a Group III nitride structure comprises providing a substrate (1) in a reactor; growing a denticulated Group III nitride layer (2) on the substrate using denticulated layer growth conditions at 900-1020° C; and growing a reduced-dislocation-density Group III nitride layer (4) atop the denticulated Group III nitride layer using reduced-dislocation-density growth conditions. |
| Filed: 5/26/2009 |
| Application Number: US2009471690A |
| Tech ID: SD 10191.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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