Weak-link capacitor
| DWPI Title: Making dielectric material, comprises making poly(phenylene vinylene) dielectric precursor polymer comprising halogen leaving group and energizing dielectric precursor polymer by e.g. exposure to radiation to eliminate halogen leaving group |
| Abstract: A process for making a dielectric material where a precursor polymer selected from poly(phenylene vinylene)polyacetylene, poly(p-phenylene), poly(thienylene vinylene), poly(1,4-naphthylene vinylene), and poly(p-pyridine vinylene) is energized said by exposure by radiation or increase in temperature to a level sufficient to eliminate said leaving groups contained within the precursor polymer, thereby transforming the dielectric material into a conductive polymer. The leaving group in the precursor polymer can be a chloride, a bromide, an iodide, a fluoride, an ester, an xanthate, a nitrile, an amine, a nitro group, a carbonate, a dithiocarbamate, a sulfonium group, an oxonium group, an iodonium group, a pyridinium group, an ammonium group, a borate group, a borane group, a sulphinyl group, or a sulfonyl group. |
| Use: The process is useful for making dielectric material (claimed), which is useful as for forming capacitors for electrical and electronic devices. |
| Advantage: The process utilizes the dielectric precursor polymer having low dissipation factor and broad range of operating temperatures, and provides the dielectric material having high dielectric constant, in which the capacitors formed from this dielectric material can be effectively shut down in the event of fire or overheating, thus providing fundamental safety mechanism in high voltage electronic and electrical devices. |
| Novelty: Making dielectric material, comprises: making a poly(phenylene vinylene) dielectric precursor polymer which is 1,4-bis(bromomethyl)-2,3-diphenylbenzene and 1,4-bis(iodomethyl)-2,3-diphenylbenzene, where the precursor polymer comprises a halogen leaving group comprising a bromide or an iodide; and energizing the dielectric precursor polymer by exposure to radiation or increase in temperature to a level sufficient to eliminate the halogen leaving group, thus transforming the dielectric precursor polymer into a semiconductive or conductive polymer. |
| Filed: 5/2/2011 |
| Application Number: US13099143A |
| Tech ID: SD 11714.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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