Low-dislocation-density epitatial layers grown by defect filtering by self-assembled layers of spheres

DWPI Title: Making reduced-dislocation-density material for electronic, by applying spheroidal particle monolayers to substrate and first layer growth material, growing second layer on first, terminating threading dislocations propagating from material
Abstract: A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.
Use: For making reduced-dislocation-density material (claimed) useful as a low-dislocation-density substrate for electronic and optical devices; and in making semiconducting and non-semiconducting materials where threading-dislocation-density reduction and/or crack reduction is desired.
Advantage: The method enables growth and coalescence to form a very-low-dislocation-density surface of the material. The self-assembly-based technique provides defect filtering, controlled simply by the size of spheres and number of sphere layers deposited, without any lithography, and allows for a single material growth step to be used to obtain low-dislocation-density material layers.
Novelty: Making reduced-dislocation-density material, involves: applying monolayers of spheroidal particles to substrate and first layer of growth material, where monolayers having interstices between particles; initiating growth of second layer of material at sites on first layer that are exposed to reactant gases through interstices; growing material; terminating adjacent to particles threading dislocations propagating through material; and coalescing material growing through adjacent interstices to embed monolayers within second layer to form a second layer with reduced dislocation density.
Filed: 2/18/2009
Application Number: US2009388103A
Tech ID: SD 10594.0
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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