Frequency selective infrared sensors

DWPI Title: Frequency selective infrared (IR) photo detector used in defense application, frequency selective surface plasmonic structure that transmits radiation in predetermined frequency band that is incident on structure
Abstract: A frequency selective infrared (IR) photodetector having a predetermined frequency band. The exemplary frequency selective photodetector includes: a dielectric IR absorber having a first surface and a second surface substantially parallel to the first surface; an electrode electrically coupled to the first surface of the dielectric IR absorber; and a frequency selective surface plasmonic (FSSP) structure formed on the second surface of the dielectric IR absorber. The FSSP structure is designed to selectively transmit radiation in the predetermined frequency band that is incident on the FSSP structure substantially independent of the angle of incidence of the incident radiation on the FSSP structure.
Use: Frequency selective IR photo detector for frequency selective IR rectenna used in defense application.
Advantage: The radiation across the IR spectral range can be detected and monitored and the demand for various forms of frequency selective IR sensors can be satisfied. The electrical noise can be blocked without affecting the performance of the optical device at the design frequency band of the FSSP structure. The materials of FSSP structure and electrode to be formed of materials with different work functions, so as to improve the conversion of the surface plasmon wave (SPW) into an electrical signal. The high electric field strength associated with resonant SPW on the surface of FSSP structure can be attained. The optional doping pattern can be used to form an array of pixel elements within dielectric IR absorber corresponding to the array of electrodes, such that the crosstalk between the pixels of frequency selective IRFPA can be reduced.
Novelty: The frequency selective IR photo detector has a dielectric IR absorber (102) having parallel surfaces. An electrode (104) is electrically coupled to one surface of IR absorber. A frequency selective surface plasmonic (FSSP) structure (100) is formed on other surface of IR absorber. The FSSP structure selectively transmits a radiation in a predetermined frequency band that is incident on the FSSP structure independent of the angle of incidence of the incident radiation on the FSSP structure.
Filed: 8/30/2010
Application Number: US2010871334A
Tech ID: SD 11433.0
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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