High efficiency III-nitride light-emitting diodes
| DWPI Title: Multiple-quantum-well heterostructured III-gallium nitride based laser LED, has active region comprising barrier layers surrounding well layer, where impurity concentrations of barrier layers are tailored to symmetrize carrier transport |
| Abstract: Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination. |
| Use: Multiple-quantum-well heterostructured III-gallium nitride based laser LED for high-power lighting and illumination applications. Can also be used as an indium gallium nitride based laser LED, aluminum gallium nitride based laser LED and an aluminum indium gallium nitride based laser LED. |
| Advantage: The LED utilizes tailored doping of quantum barriers to symmetrize carrier transport and to achieve uniform carrier distribution among the multiple- quantum-wells, thus reducing electron leakage, and hence reducing efficiency droop at high injection current. The LED utilizes donor impurity doping in barriers to provide an additional source of free carriers for improved LED efficiency. |
| Novelty: The LED has multiple-quantum-well active region (10) comprising two alternating barrier layers (5) surrounding a central quantum well layer (4). The alternating barrier layers are doped with different donor impurity concentrations. The different donor impurity concentrations of the alternating barrier layers are tailored to symmetrize carrier transport and achieve uniform carrier distribution among multiple-quantum-wells. The central quantum well layer comprises gallium nitride, indium gallium nitride, aluminum gallium nitride and aluminum indium gallium nitride. |
| Filed: 3/17/2011 |
| Application Number: US13050673A |
| Tech ID: SD 11650.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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