Lateral acoustic wave resonator comprising a suspended membrane of low damping resonator material
| DWPI Title: Lateral acoustic wave resonator has piezoelectric transducer that is positioned on planar membrane equipped with low damping resonator material and suspended from substrate |
| Abstract: A very high-Q, low insertion loss resonator can be achieved by storing many overtone cycles of a lateral acoustic wave (i.e., Lamb wave) in a lithographically defined suspended membrane comprising a low damping resonator material, such as silicon carbide. The high-Q resonator can sets up a Fabry-Perot cavity in a low-damping resonator material using high-reflectivity acoustic end mirrors, which can comprise phononic crystals. The lateral overtone acoustic wave resonator can be electrically transduced by piezoelectric couplers. The resonator Q can be increased without increasing the impedance or insertion loss by storing many cycles or wavelengths in the high-Q resonator material, with much lower damping than the piezoelectric transducer material. |
| Use: Lateral acoustic wave resonator. Uses include but are not limited to TV broadcasting application, global positioning system (GPS), mobile phone system and wireless local area network. |
| Advantage: By storing many overtone cycles of the lateral acoustic wave such as lamb wave in lithographically defined suspended membrane, high quality factor with a narrow bandwidth in the giga hertz (GHz) range can be achieved. The resonator can be able to maintain the low impedance level for low insertion loss and radio frequency power transmission. The lateral acoustic wave resonator can be lithographically defined using micro-electro-mechanical systems (MEMS) and complementary metal oxide semiconductor (CMOS) compatible fabrication processes. |
| Novelty: The lateral acoustic wave resonator (10) has a planar membrane (11) that is equipped with a low damping resonator material and suspended from a substrate. A piezoelectric transducer (14) is positioned on the membrane and adapted to generate a fundamental or overtone mode lateral acoustic wave (12) to form a standing wave resonance in the planar membrane. The resonator material is formed of a non-piezoelectric material selected from any one of silicon carbide, sapphire, yttrium aluminum gamet, or diamond. |
| Filed: 5/28/2010 |
| Application Number: US2010790303A |
| Tech ID: SD 11319.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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