Radiation-hardened transistor and integrated circuit
| DWPI Title: Composite transistor for inverter circuit of complementary metal-oxide semiconductor (CMOS) integrated circuit (IC), has blocking transistor with body terminal that is joined only to source terminal |
| Abstract: A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs. |
| Use: For inverter circuit of complementary metal-oxide semiconductor (CMOS) integrated circuit (IC). |
| Advantage: Prevents occurrence of single-event transient (SET) through the blocking transistor. Prevents the SET from being coupled outside the composite transistor through the circuit transistor. |
| Novelty: The composite transistor (10,10') has circuit transistors (12,12') and blocking transistors (14,14') that are joined in series. The composite transistor has a gate terminal formed by joining the gate terminals of the circuit and blocking transistors, and source, drain, and body terminals that corresponds to the source terminal of the circuit transistor, drain terminal of the blocking transistor, and body terminal of the circuit transistor, respectively. The body terminal of the blocking transistor is joined to a source terminal, and electrically isolated from other connection points. |
| Filed: 2/21/2006 |
| Application Number: US2006358391A |
| Tech ID: SD 10153.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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