Molten-salt-based growth of group III nitrides
| DWPI Title: Growing Group III nitride crystalline material for optoelectronic and high-frequency, high-power electronics, uses molten salt solvent to solubilize Group III ions and nitride ions |
| Abstract: A method for growing Group III nitride materials using a molten halide salt as a solvent to solubilize the Group-III ions and nitride ions that react to form the Group III nitride material. The concentration of at least one of the nitride ion or Group III cation is determined by electrochemical generation of the ions. |
| Use: A method for growing Group III nitride crystalline material (claimed) for optoelectronic and high-frequency, high-power electronics. |
| Advantage: The method is scalable, manufacturable, moderately inexpensive, and controllable; has a high growth rate and can produce a low impurity content; and can produce crystals of superior crystalline quality (dislocation densities below 10 7 cm -2 ). |
| Novelty: Growing Group III nitride crystalline material comprises forming a nitride ion by reducing a nitrogen gas; forming a Group III cation by oxidizing a liquid Group III metal; and combining the Group III cation and the nitride ion to form a Group III nitride. The steps of forming the nitride ion, forming the Group III cation, and combining the Group III cation and the nitride ion are performed in a molten salt solvent (30). |
| Filed: 4/8/2005 |
| Application Number: US2005102357A |
| Tech ID: SD 7721.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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