Nanowire-templated lateral epitaxial growth of non-polar group III nitrides

DWPI Title: Epitaxial growth of nonpolar Group III nitrides involves growing by metal-organic chemical vapor growth technique a Group III nitride material laterally from single-crystal Group III nitride nanowires under lateral growth conditions
Abstract: A method for growing high quality, nonpolar Group III nitrides using lateral growth from Group III nitride nanowires. The method of nanowire-templated lateral epitaxial growth (NTLEG) employs crystallographically aligned, substantially vertical Group III nitride nanowire arrays grown by metal-catalyzed metal-organic chemical vapor deposition (MOCVD) as templates for the lateral growth and coalescence of virtually crack-free Group III nitride films. This method requires no patterning or separate nitride growth step.
Use: Method for epitaxial growth of nonpolar Group III nitrides.
Advantage: The method can provide nonpolar Group III nitrides having high quality, and requires no patterning or separate nitride growth step.
Novelty: Epitaxially growing nonpolar Group III nitrides comprises forming metal catalyst nanoclusters on a surface of a crystallographic template substrate; growing by a metal-organic chemical vapor growth technique of single-crystal Group III nitride nanowires that are vertically oriented using the metal catalyst nanoclusters under nanowire growth conditions; and growing by a metal-organic chemical vapor growth technique a Group III nitride material laterally from the single-crystal Group III nitride nanowires under lateral growth conditions to form a coalesced Group III nitride layer.
Filed: 10/3/2007
Application Number: US2007866748A
Tech ID: SD 10590.0
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
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