Microfabricated bulk wave acoustic bandgap device
| DWPI Title: Microfabricated bulk wave (BAW) acoustic bandgap (ABG) device used in communications, ultrasound and non-destructive testing, has three-dimensional periodic array of scatterers embedded in matrix material of membrane suspended on substrate |
| Abstract: A microfabricated bulk wave acoustic bandgap device comprises a periodic two-dimensional array of scatterers embedded within the matrix material membrane, wherein the scatterer material has a density and/or elastic constant that is different than the matrix material and wherein the periodicity of the array causes destructive interference of the acoustic wave within an acoustic bandgap. The membrane can be suspended above a substrate by an air or vacuum gap to provide acoustic isolation from the substrate. The device can be fabricated using microelectromechanical systems (MEMS) technologies. Such microfabricated bulk wave phononic bandgap devices are useful for acoustic isolation in the ultrasonic, VHF, or UHF regime (i.e., frequencies of order 1 MHz to 10 GHz and higher, and lattice constants of order 100 μm or less). |
| Use: Microfabricated BAW ABG device used in communications, ultrasound and non-destructive testing. |
| Advantage: Provides a BAW ABG device that can be fabricated using microelectromechanical systems technologies. Enables phononic channel drop tunneling to selectively transfer one particular acoustic wavelength between two parallel coupled waveguides. |
| Novelty: The BAW ABG device (10) has a membrane comprising of matrix material (12) and suspended above a substrate, such that a longitudinal acoustic wave is propagated in the plane of the membrane. A three-dimensional periodic array of scatterers (11) is embedded within the matrix material. The periodic array comprises a cermet topology, and the scatterer material has a higher acoustic impedance than the matrix material. The periodicity of the array causes destructive interference of the longitudinal acoustic wave within an acoustic bandgap. |
| Filed: 5/15/2007 |
| Application Number: US2007748832A |
| Tech ID: SD 10074.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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