Highly aligned vertical GaN nanowires using submonolayer metal catalysts
| DWPI Title: Fabricating vertically oriented nanowires on substrate, comprises depositing sub-monolayer of catalyst metal atoms on surface of crystallographic template substrate, and heating crystallographic template substrate under reducing atmosphere |
| Abstract: A method for forming vertically oriented, crystallographically aligned nanowires (nanocolumns) using monolayer or submonolayer quantities of metal atoms to form uniformly sized metal islands that serve as catalysts for MOCVD growth of Group III nitride nanowires. |
| Use: The method is useful for fabricating vertically oriented gallium nitride nanowires or nanocolumns on a substrate, where the nanowires are useful for optoelectronics, electronics, field emitters and sensors. |
| Advantage: The method ensures precise and reliable fabrication of the stable nanowire with uniform size, shape and distribution with high growth and yield and sufficient control of the amount of metal deposited on the substrate surface and without the use of a sacrificial template. |
| Novelty: The method comprises depositing a sub-monolayer of catalyst metal atoms on a surface of a crystallographic template substrate using a metal evaporation technique, heating the crystallographic template substrate under a reducing atmosphere to induce surface diffusion of the catalyst metal atoms to form metal nanoclusters, and reacting gallium atom precursor molecules and nitrogen precursor molecules at the metal nanoclusters to form vertically oriented single-crystal gallium nitride nanowires epitaxially aligned with the crystallographic template substrate. |
| Filed: 10/3/2007 |
| Application Number: US2007866684A |
| Tech ID: SD 10738.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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