Method to grow group III-nitrides on copper using passivation layers
| DWPI Title: Method for growing group III-nitride on copper substrate, involves growing passivation layer on copper substrate, and growing group III-nitride epilayer on passivation layer by metal-organic chemical vapor deposition |
| Abstract: Group III-nitride epilayers can be grown directly on copper substrates using intermediate passivation layers. For example, single crystalline c-plane GaN can be grown on Cu (110) substrates with MOCVD. The growth relies on a low temperature AlN passivation layer to isolate any alloying reaction between Ga and Cu. |
| Use: Method for growing a group III-nitride on a copper substrate. |
| Advantage: The passivation layer is grown on the substrate, where the passivation layer consists of aluminum nitride, silicon nitride or titanium nitride by physical vapor deposition, chemical vapor deposition, metal-organic chemical vapor deposition, sputtering, reactive sputtering or pulsed laser deposition, and the group III-nitride epilayer is grown on the passivation layer by metal-organic chemical vapor deposition, thus growing the group III-nitride on the copper substrate in a facile manner. |
| Novelty: The method involves providing a copper substrate that consists of crystalline copper comprising single crystal copper, copper, copper or oriented polycrystalline copper. A passivation layer is grown on the substrate, where the passivation layer consists of aluminum nitride, silicon nitride or titanium nitride by physical vapor deposition, chemical vapor deposition, metal-organic chemical vapor deposition, sputtering, reactive sputtering or pulsed laser deposition. A group III-nitride epilayer is grown on the passivation layer by metal-organic chemical vapor deposition. |
| Filed: 3/15/2013 |
| Application Number: US13836594A |
| Tech ID: SD 12276.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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