Amber light-emitting diode comprising a group III-nitride nanowire active region
| DWPI Title: LED comprises substrate having frontside and backside, n-type base grown on frontside of substrate, core-shell structure on n-type base, p-type canopy layer, and p-contact to p-type canopy layer and n-contact to the n-type base |
| Abstract: A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach. |
| Use: Used as a LED. |
| Advantage: The LED exhibits high efficiencies and high temperature stability. |
| Novelty: LED (20) comprises: a substrate having a frontside and a backside; an n-type base grown on the frontside of the substrate; a core-shell structure (10) on the n-type base, comprising an array of vertically aligned faceted n-type nanowire cores; a p-type canopy layer grown on all crystal facets of the core-shell nanowires; and a p-contact (21) to the p-type canopy layer and an n-contact to the n-type base for applying a voltage across the core-shell structure and extracting electroluminescent emitted light from them. |
| Filed: 1/17/2013 |
| Application Number: US13743438A |
| Tech ID: SD 12195.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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