Method of manufacturing a fully integrated and encapsulated micro-fabricated vacuum diode
| DWPI Title: Manufacturing method for producing encapsulated micro diode in substrate involves depositing encapsulation layer on surfaces of dielectric and anode after removing portion of or sacrificial oxide layer |
| Abstract: Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer. |
| Use: Manufacturing method for producing an encapsulated micro diode in a substrate e.g., a cold cathode field emission vacuum diode. |
| Advantage: Provides a smooth, rounded anode to minimize field compression. Minimizes the variability between the tips and anodes by using a sacrificial film as a spacer. The conformal shape of the anode over the cathode enhances the electric field at the cathode, as compared to a simple, flat anode. The increased field reduces the turn-on voltage, and increases the tunneling current at a given operating voltage. |
| Novelty: The method involves forming trenches in a sacrificial oxide layer around columns and depositing a dielectric material in the trenches and on top of the sacrificial oxide layer. An opening is formed in the dielectric material, extending into the sacrificial oxide layer but not so far as to expose a portion of tips that form a cathode. A conductive material is deposited in the opening to form an anode (124). A portion of or the sacrificial oxide layer is removed. An encapsulation layer is deposited on surfaces of the dielectric and anode, forming the encapsulated micro diode in the substrate. |
| Filed: 11/17/2011 |
| Application Number: US13298448A |
| Tech ID: SD 11754.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
| Data from Derwent World Patents Index, provided by Clarivate All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license. |