Memristor using a transition metal nitride insulator

DWPI Title: Electrical/electronic apparatus, has switching layer interposed in path between conducting electrode elements, where switching layer is made of metal oxynitride and switchable between higher and lower conductance states
Abstract: Apparatus is disclosed in which at least one resistive switching element is interposed between at least a first and a second conducting electrode element. The resistive switching element comprises a metal oxynitride. A method for making such a resistive switching element is also disclosed.
Use: Electrical/electronic apparatus.
Advantage: The apparatus allows a resistance state to be determined without changing the resistance state. The apparatus utilizes electroforming technique to condition newly fabricated memristors so as to fix final high-resistance and low-resistance states of memristors.
Novelty: The apparatus has a switching layer interposed in a path between first and second conducting electrode elements, where the switching layer is made of metal oxynitride and switchable between higher and lower conductance states. The switching layer is made by exposing an aluminum nitride film to an oxidizing atmosphere. The electrode elements are in direct contact with a portion of the switching layer composed of metal oxynitride, where a portion of the switching layer is provided with an oxygen mole fraction of 5% and oxygen is distributed in the switching layer.
Filed: 1/25/2013
Application Number: US13750451A
Tech ID: SD 12053.1
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
All rights reserved. Republication or redistribution of Clarivate content, including by framing or similar means, is prohibited without the prior written consent of Clarivate. Clarivate and its logo, as well as all other trademarks used herein are trademarks of their respective owners and used under license.