Frequency selective infrared sensors
| DWPI Title: Frequency selective infrared rectenna with predetermined frequency band for use in military application, has via conductors formed in vias in electrically insulating via layer, and electrode electrically coupled to via conductors |
| Abstract: A frequency selective infrared (IR) photodetector having a predetermined frequency band. The exemplary frequency selective photodetector includes: a dielectric IR absorber having a first surface and a second surface substantially parallel to the first surface; an electrode electrically coupled to the first surface of the dielectric IR absorber; and a frequency selective surface plasmonic (FSSP) structure formed on the second surface of the dielectric IR absorber. The FSSP structure is designed to selectively transmit radiation in the predetermined frequency band that is incident on the FSSP structure substantially independent of the angle of incidence of the incident radiation on the FSSP structure. |
| Use: Frequency selective infrared (IR) rectenna with a predetermined frequency band for use in defense application i.e. military application. |
| Advantage: The FSSP structure allows a patterned conductive layer to be added to a surface without increasing reflection at the design frequency or significantly affecting a transmission of the surface. The FSSP structure selectively converts the radiation in the predetermined frequency band that is incident on the FSSP structure into surface plasmon waves independent of an angle of incidence of the incident radiation on the FSSP structure. |
| Novelty: The rectenna has an electrically insulating thin film layer coupled to a surface of a frequency selective surface plasmonic (FSSP) structure (100). An electrically insulating via layer is coupled to the electrically insulating thin film layer opposite to the FSSP structure, and includes a set of vias running approximately perpendicular to a surface of the FSSP structure. A set of via conductors is formed in the vias in the electrically insulating via layer. An electrode (502) is electrically coupled to the via conductors. |
| Filed: 4/26/2013 |
| Application Number: US13871676A |
| Tech ID: SD 11433.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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