Structured wafer for device processing

DWPI Title: Structured wafer processing method for semiconductor devices, involves removing release layer using etchant which accesses release layer via through passages to separate devices from structured wafer
Abstract: A structured wafer that includes through passages is used for device processing. Each of the through passages extends from or along one surface of the structured wafer and forms a pattern on a top surface area of the structured wafer. The top surface of the structured wafer is bonded to a device layer via a release layer. Devices are processed on the device layer, and are released from the structured wafer using etchant. The through passages within the structured wafer allow the etchant to access the release layer to thereby remove the release layer.
Use: Structured wafer processing method for semiconductor devices.
Advantage: Achieves a structured wafer that is reusable to produce more batches of devices with any sizes, shapes and functions.
Novelty: The processing method involves bonding a top surface of a structured wafer to a release layer (21) and a device layer (22). The structured wafer has through passages that extend from or along a surface of the structured wafer to the top surface (24) of the structured wafer. The device layer is processed to produce devices. The release layer is removed using an etchant which accesses the release layer via the through passages to separate the devices from the structured wafer.
Filed: 4/2/2014
Application Number: US14243665A
Tech ID: SD 11956.1
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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