Impurity-induced disorder in III-nitride materials and devices
| DWPI Title: Method for impurity-induced layer disordering in III-nitride materials, involves post-growth annealing heterostructure at annealing temperature, time and carrier gas pressure that induces disorder of heterostructure layer interfaces |
| Abstract: A method for impurity-induced disordering in III-nitride materials comprises growing a III-nitride heterostructure at a growth temperature and doping the heterostructure layers with a dopant during or after the growth of the heterostructure and post-growth annealing of the heterostructure. The post-growth annealing temperature can be sufficiently high to induce disorder of the heterostructure layer interfaces. |
| Use: Method for impurity-induced layer disordering in III-nitride materials to create a device. Uses include but are not limited to optical waveguide, light-emitting diode, photodetector, solar cell, modulator, laser and amplifier. |
| Advantage: The method enables post-growth annealing the heterostructure at the annealing temperature, time and carrier gas pressure that induces disorder of the heterostructure layer interfaces such that the heterostructure can be selectively disordered when the post-growth annealing conditions promote layer disordering in the portions of the heterostructure without the dielectric overlayer and the portions of the heterostructure covered by the dielectric layer are prevented from layer disordering. |
| Novelty: The method involves growing III-nitride heterostructure at a growth temperature chosen to prevent layer disordering. Heterostructure layers are doped with an impurity during growth. The heterostructure is post-growth annealed at an annealing temperature, time and carrier gas pressure that induces disorder of heterostructure layer interfaces. A dielectric layer is deposited on a portion of the surface of the doped heterostructure prior to the post-growth annealing. |
| Filed: 7/26/2012 |
| Application Number: US13558516A |
| Tech ID: SD 11731.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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