Method of forming through substrate vias (TSVs) and singulating and releasing die having the TSVs from a mechanical support substrate
| DWPI Title: Method for forming through substrate vias (TSVs) and singulating and releasing integrated die from mechanical support substrate, involves releasing integrated circuit die from mechanical support substrate |
| Abstract: Accessing a workpiece object in semiconductor processing is disclosed. The workpiece object includes a mechanical support substrate, a release layer over the mechanical support substrate, and an integrated circuit substrate coupled over the release layer. The integrated circuit substrate includes a device layer having semiconductor devices. The method also includes etching through-substrate via (TSV) openings through the integrated circuit substrate that have buried ends at or within the release layer including using the release layer as an etch stop. TSVs are formed by introducing one or more conductive materials into the TSV openings. A die singulation trench is etched at least substantially through the integrated circuit substrate around a perimeter of an integrated circuit die. The integrated circuit die is at least substantially released from the mechanical support substrate. |
| Use: Method for forming through substrate vias (TSVs) and singulating and releasing integrated die from mechanical support substrate, for use in three-dimensional (3D) integrated circuit packages such as system in package and chip stack multi-chip module used in computer system, digital camera, cell phone, communications equipment, and other electronic devices. |
| Advantage: The relatively thin integrated circuit substrate coupled with the mechanical support substrate allows relatively small diameter TSV openings to be formed through an entire thickness of the integrated circuit substrate. The requirement to use a thick integrated circuit substrate for support and subsequently need to back polish the thick substrate to reveal the TSVs are avoided since the substrate is too thick to be able to etch the TSV openings through the entire thickness of the substrate. The mechanical support substrate facilitates the formation of relatively densely packed TSV openings. The relatively densely packed TSV openings increases the amount of data that can be conveyed from the integrated circuit to other integrated circuits or signaling mediums, so that performance and/or functionality is increased. By reusing the substrate the manufacturing costs are reduced. |
| Novelty: The method (100) involves accessing (101) a workpiece object that includes a release layer over mechanical support substrate, and an integrated circuit substrate coupled over release layer. Through-substrate via (TSV) openings are etched (102) through the integrated circuit substrate. The TSVs are formed (103) by introducing conductive materials into the TSV openings. A die singulation trench is etched (104) through the integrated circuit substrate around a perimeter of an integrated circuit die. The integrated circuit die is released (105) from mechanical support substrate. |
| Filed: 10/25/2013 |
| Application Number: US14063152A |
| Tech ID: SD 12605.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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