Ion chamber based neutron detectors
| DWPI Title: Neutron detection system for sensing special nuclear material, has neutron moderating material that is encompassed by thermal neutron detector, and uniformly distribution through planar bottom and top surfaces of high pressure ion chamber |
| Abstract: A neutron detector with monolithically integrated readout circuitry, including: a bonded semiconductor die; an ion chamber formed in the bonded semiconductor die; a first electrode and a second electrode formed in the ion chamber; a neutron absorbing material filling the ion chamber; and the readout circuitry which is electrically coupled to the first and second electrodes. The bonded semiconductor die includes an etched semiconductor substrate bonded to an active semiconductor substrate. The readout circuitry is formed in a portion of the active semiconductor substrate. The ion chamber has a substantially planar first surface on which the first electrode is formed and a substantially planar second surface, parallel to the first surface, on which the second electrode is formed. The distance between the first electrode and the second electrode may be equal to or less than the 50% attenuation length for neutrons in the neutron absorbing material filling the ion chamber. |
| Use: Neutron detection system for sensing special nuclear material. |
| Advantage: Utilization of neutron absorbing material is increased due to reduced self-absorption and uniform distribution through the planar bottom and top surfaces of the high pressure ion chamber. Fast and simple localization and identification of neutron source is ensured since the ion chamber neutron detectors are designed to detect the direction of flight of detected neutrons. |
| Novelty: The neutron detection system has electrodes (206,208) that are formed on the bottom and top surfaces of a high pressure ion chamber (202), which is formed from dielectric material. Electronics are embedded within the device layer of a wafer. A neutron absorbing material (204) is filled in the high pressure ion chamber, and having chamber pressure equal to or greater than 100 standard atmospheric pressure. A neutron moderating material (210) is encompassed by a thermal neutron detector (200), and uniformly distribution through the planar bottom and top surfaces of the ion chamber. |
| Filed: 7/26/2012 |
| Application Number: US13559370A |
| Tech ID: SD 10305.2 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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