Method of fabricating low-dislocation-density epitaxially-grown films with textured surfaces

DWPI Title: Preparing a surface-textured single-crystal film layer by preparing a layered structure, selectively etching microparticles using an etchant, and releasing single-crystal film layer from substrate
Abstract: A method for forming a surface-textured single-crystal film layer by growing the film atop a layer of microparticles on a substrate and subsequently selectively etching away the microparticles to release the surface-textured single-crystal film layer from the substrate. This method is applicable to a very wide variety of substrates and films. In some embodiments, the film is an epitaxial film that has been grown in crystallographic alignment with respect to a crystalline substrate.
Use: The method is useful for preparing a surface-textured single-crystal film layer (claimed).
Advantage: The method provides a simple and direct approach process of preparing a surface-textured single-crystal film layer.
Novelty: Preparation of a surface-textured single-crystal film layer, involves: preparing a layered structure comprising a substrate with a crystalline surface, a layer of microparticles atop the substrate; and a single-crystal film layer atop the layer of microparticles; selectively etching the microparticles using an etchant that etches the microparticles sufficiently rapidly; and releasing the single-crystal film layer from the substrate when a sufficient amount of the microparticles have been etched away.
Filed: 5/23/2011
Application Number: US13113123A
Tech ID: SD 11582.1
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
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