Processes for multi-layer devices utilizing layer transfer
| DWPI Title: Fabrication method for fabrication apparatus of semiconductor devices e.g., integrated circuit, involves etching release layer to release donor substrate from multiple semiconductor devices |
| Abstract: A method includes forming a release layer over a donor substrate. A plurality of devices made of a first semiconductor material are formed over the release layer. A first dielectric layer is formed over the plurality of devices such that all exposed surfaces of the plurality of devices are covered by the first dielectric layer. The plurality of devices are chemically attached to a receiving device made of a second semiconductor material different than the first semiconductor material, the receiving device having a receiving substrate attached to a surface of the receiving device opposite the plurality of devices. The release layer is etched to release the donor substrate from the plurality of devices. A second dielectric layer is applied over the plurality of devices and the receiving device to mechanically attach the plurality of devices to the receiving device. |
| Use: Fabrication method for fabrication apparatus (claimed) of semiconductors devices e.g., integrated circuits, and microelectromechanical-based devices, used in microelectronic and optoelectronic applications. |
| Advantage: Enable to fabricate a semiconductor device with multiple functions with reduced fabrication and material cost, since the receiving substrate can be reused. Accelerates release process of layers, since only release layer is exposed to the etchant and will be etched away, and the presence of holes allows the etchant to reach release layer from bottom surface, as well as in exposed side surfaces. |
| Novelty: The fabrication method involves forming of multiple semiconductor devices (302) made of a first semiconductor material over the release layer. A first dielectric layer (902) is applied over the devices such that all exposed surfaces of devices are covered by first dielectric layer. The devices are attached to a receiving structure made of a second semiconductor material. The receiving structure (602) has a receiving substrate (604) attached to a surface of the receiving structure opposite the devices. The release layer (606) is etched to release the donor substrate from the multiple devices. |
| Filed: 9/26/2012 |
| Application Number: US13627425A |
| Tech ID: SD 12205.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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