Membrane projection lithography
| DWPI Title: Method for forming complementary metal-oxide-semiconductor inverter used in integrated circuit, involves forming first structure on second structure, where first structure is formed by etching operation through opening in membrane layer |
| Abstract: The various technologies presented herein relate to a three dimensional manufacturing technique for application with semiconductor technologies. A membrane layer can be formed over a cavity. An opening can be formed in the membrane such that the membrane can act as a mask layer to the underlying wall surfaces and bottom surface of the cavity. A beam to facilitate an operation comprising any of implantation, etching or deposition can be directed through the opening onto the underlying surface, with the opening acting as a mask to control the area of the underlying surfaces on which any of implantation occurs, material is removed, and/or material is deposited. The membrane can be removed, a new membrane placed over the cavity and a new opening formed to facilitate another implantation, etching, or deposition operation. By changing the direction of the beam different wall/bottom surfaces can be utilized to form a plurality of structures. |
| Use: Method for forming a three-dimensional structure semiconductor device i.e. complementary metal-oxide-semiconductor inverter, used in an integrated circuit for biological applications. Can also be used for forming a bipolar transistor i.e. fin-field effect transistor, complementary metal-oxide-semiconductor device and photonic semiconductor device, diode, metal-oxide-semiconductor capacitor, photovoltaic semiconductor device and a memory/storage device. |
| Advantage: The method enables determining construction of the integrated circuit so as to make unauthorized copies, thus determining improvement of the construction of the integrated circuit while thwarting an attack in an efficient manner. |
| Novelty: The method involves forming a first structure in a cavity of a matrix material, where the first structure is formed by a first deposition operation, a first implantation operation or a first etching operation performed through a first opening in a first membrane layer formed over the cavity. A second structure is formed on the first structure, where the second structure is formed by a second deposition operation, a second implantation operation or a second etching operation performed through a second opening in a second membrane layer formed over the cavity. |
| Filed: 9/3/2013 |
| Application Number: US14017132A |
| Tech ID: SD 12648.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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