Photovoltaic power generation system free of bypass diodes
| DWPI Title: Photovoltaic sub-module of solar panel used for photovoltaic power generation system, has several micro system-enabled photovoltaic cells which are free of bypass diodes |
| Abstract: A photovoltaic power generation system that includes a solar panel that is free of bypass diodes is described herein. The solar panel includes a plurality of photovoltaic sub-modules, wherein at least two of photovoltaic sub-modules in the plurality of photovoltaic sub-modules are electrically connected in parallel. A photovoltaic sub-module includes a plurality of groups of electrically connected photovoltaic cells, wherein at least two of the groups are electrically connected in series. A photovoltaic group includes a plurality of strings of photovoltaic cells, wherein a string of photovoltaic cells comprises a plurality of photovoltaic cells electrically connected in series. The strings of photovoltaic cells are electrically connected in parallel, and the photovoltaic cells are microsystem-enabled photovoltaic cells. |
| Use: Photovoltaic sub-module of solar panel (claimed) used for photovoltaic power generation system in residential building. |
| Advantage: Since the photovoltaic sub-module main portion is free of bypass diodes, the amount of power dissipated across any one of the photovoltaic sub-modules can be reduced in effective manner. Thus, the risk of damage to photovoltaic sub-module in solar panel can be minimized effectively. |
| Novelty: The sub-module (400) has several micro system-enabled photovoltaic cells which are in electric connection with one another. The height and width of microsystem-enabled photovoltaic cells is not grater than two centimeters. The photovoltaic sub-module main portion is free of bypass diodes. The micro system-enabled cells are comprised of indium gallium phosphide (InGaP) cells/ indium gallium arsenide (InGaAs) cells, gallium arsenide (GaAs) cells, germanium (Ge) cells and silicon (Si) cells. |
| Filed: 7/6/2012 |
| Application Number: US13543297A |
| Tech ID: SD 12204.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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