Photovoltaic cell with light trapping for enhanced efficiency
| DWPI Title: Surface-modified thin-film silicon photovoltaic cell, has rear confinement layer arranged proximal to back surface of semiconductor film and defining real or effective back array of Mie scatterers |
| Abstract: The efficiency of a photovoltaic cell is enhanced by light trapping using Mie-scattering nanostructures. In one embodiment, an array of nanocylinders is formed on the front surface of a silicon film to enhance forward scattering into the film, and an array of nanocylinders is formed on the back surface to enhance backscattering so that more light is absorbed within the silicon film. In an alternate embodiment, a mirror layer is formed on the back surface of the silicon film to reflect light within the film back toward the front-surface nanocylinder array. |
| Use: Surface-modified thin-film silicon photovoltaic cell. |
| Advantage: The cell enhances trapping effect, thus increasing photovoltaic conversion efficiency. The cell finds dimensions suitable for tuning resonances to other wavelengths or for adapting design to other materials through computational modeling using readily available simulation tools without undue experimentation. |
| Novelty: The cell has a photodiode structure defined within a semiconductor film. A front array of Mie scatterers is mounted in a layer proximal to a front surface of the semiconductor film. The Mie scatterers are nanocylinders (1230) dimensioned to provide enhanced forward scattering of externally incident light in a range of wavelengths effective for photovoltaically stimulating the photodiode structure. A rear confinement layer is arranged proximal to the back surface of the semiconductor film. The rear confinement layer defines a real or effective back array of Mie scatterers. |
| Filed: 11/26/2014 |
| Application Number: US14555438A |
| Tech ID: SD 12589.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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