Three-dimensional stacked structured ASIC devices and methods of fabrication thereof
| DWPI Title: Integrated circuit assembly, has dies interconnected by hard-wired vertical vias to form three-dimensional stack, where mask-programmed patterns of vias of respective dies collectively define mask-programmable routing for pattern |
| Abstract: A 3D stacked sASIC is provided that includes a plurality of 2D reconfigurable structured structured ASIC (sASIC) levels interconnected through hard-wired arrays of 3D vias. The 2D sASIC levels may contain logic, memory, analog functions, and device input/output pad circuitry. During fabrication, these 2D sASIC levels are stacked on top of each other and fused together with 3D metal vias. Such 3D vias may be fabricated as through-silicon vias (TSVs). They may connect to the back-side of the 2D sASIC level, or they may be connected to top metal pads on the front-side of the 2D sASIC level. |
| Use: IC assembly. |
| Advantage: The assembly facilitates integration of silicon photonics with the structured ASIC stacks with channels with silicon photonics due to a large number of TSVs with low parasitics. The assembly includes bond pads in master tile layout to maintain signal-routing tracks at cost of higher area overhead. The assembly is fabricated in a faster and economical manner. |
| Novelty: The assembly has structured application-specific integrated circuit (ASIC) dies vertically arranged and interconnected by hard-wired vertical vias to form a three-dimensional (3D) stack and by a 3D application-specific interconnection pattern. Each of the dies includes metallization layers. The adjacent pair of metallization layers in each of the dies is interconnected by a mask-programmed pattern of vias. The mask-programmed patterns of vias of the respective dies collectively define mask-programmable routing for the 3D application-specific interconnection pattern. |
| Filed: 5/20/2014 |
| Application Number: US14283101A |
| Tech ID: SD 12423.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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