Tuning and synthesis of semiconductor nanostructures by mechanical compression
| DWPI Title: Synthesizing semiconductor nanostructures involves providing film comprising periodically ordered assembly of compound semiconductor nanoparticles in pressure-transmitting medium |
| Abstract: A mechanical compression method can be used to tune semiconductor nanoparticle lattice structure and synthesize new semiconductor nanostructures including nanorods, nanowires, nanosheets, and other three-dimensional interconnected structures. II-VI or IV-VI compound semiconductor nanoparticle assemblies can be used as starting materials, including CdSe, CdTe, ZnSe, ZnS, PbSe, and PbS. |
| Use: Method for synthesizing semiconductor nanostructures. |
| Advantage: The method synthesizes the semiconductor nanostructures in a simple manner, and allows in-situ optical characterizations of interparticle-spacing-based physics and monitoring of structural evolution of the nanoparticle assembly. |
| Novelty: Semiconductor nanostructures synthesis involves providing film comprising a periodically ordered assembly of compound semiconductor nanoparticles in a pressure-transmitting medium. The film is compressed to a pressure above a threshold pressure to contact, coalesce, and sinter to synthesize a new nanostructure comprising a nanorod, nanowire or nanosheet. |
| Filed: 5/30/2013 |
| Application Number: US13905959A |
| Tech ID: SD 12473.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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