Multilevel resistive information storage and retrieval
| DWPI Title: Method for storing information in first resistive memory device, involves providing first filament within first device, combination of state variables corresponds to storage coordinate |
| Abstract: The present invention relates to resistive random-access memory (RRAM or ReRAM) systems, as well as methods of employing multiple state variables to form degenerate states in such memory systems. The methods herein allow for precise write and read steps to form multiple state variables, and these steps can be performed electrically. Such an approach allows for multilevel, high density memory systems with enhanced information storage capacity and simplified information retrieval. |
| Use: Method for storing information in first resistive memory device. |
| Advantage: The resistance is easily read electrically, and since the thermal profile depends on both geometry and conductivity, and the power required to reach thermal activation is used to read the second dimension in information space. |
| Novelty: The method involves providing a first filament within a first device (110). A state has the multiple state variables that are established by first filament radius as one state variable and/or first conductivity as a second state variable. A combination of state variables corresponds to a storage coordinate relating a resistance of the first device, and an applied power needed to begin changing the resistance of the first device. |
| Filed: 8/18/2014 |
| Application Number: US14462472A |
| Tech ID: SD 12822.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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