Infrared detector device inspection system
| DWPI Title: Method for identifying carrier lifetimes for materials utilized in optical detectors, involves detecting photons emitted from material at group of locations, and identifying carrier lifetime for group of locations based on photons |
| Abstract: Methods and apparatuses for identifying carrier lifetimes are disclosed herein. In a general embodiment, a beam of light is sent to a group of locations on a material for an optical device. Photons emitted from the material are detected at each of the group of locations. A carrier lifetime is identified for each of the group of locations based on the photons detected from each of the group of locations. |
| Use: Method for identifying carrier lifetimes for materials utilized in optical detectors. |
| Advantage: The method enables the material to be undesired inconsistencies at a level to make the material unsuitable for use in an infrared detector device, so that a material layer can be discarded without discarding circuits, and time taken to attach the circuits to the material can be reduced or avoided. |
| Novelty: The method involves sending a beam (118) of light (106) i.e. laser beam to a group of locations (124) on a material (104) for an optical device. Photons (132) emitted from the material are detected at the group of locations. A carrier lifetime (128) for the group of locations is identified based on the photons detected from the group of locations and a simulation of the photons emitted from the material at the group of locations, where the material is located in a wafer, a focal plane array (112), an infrared detector device (110) and a chip with an integrated circuit. |
| Filed: 4/17/2015 |
| Application Number: US14689167A |
| Tech ID: SD 12796.1 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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