Integrated field emission array for ion desorption
| DWPI Title: Manufacturing method for semiconductor involves etching top silicon oxide film through polysilicon-lined annular recess using isotropic etching process such that annular cavity with rounded cross section forms in top silicon oxide film |
| Abstract: An integrated field emission array for ion desorption includes an electrically conductive substrate; a dielectric layer lying over the electrically conductive substrate comprising a plurality of laterally separated cavities extending through the dielectric layer; a like plurality of conically-shaped emitter tips on posts, each emitter tip/post disposed concentrically within a laterally separated cavity and electrically contacting the substrate; and a gate electrode structure lying over the dielectric layer, including a like plurality of circular gate apertures, each gate aperture disposed concentrically above an emitter tip/post to provide a like plurality of annular gate electrodes and wherein the lower edge of each annular gate electrode proximate the like emitter tip/post is rounded. Also disclosed herein are methods for fabricating an integrated field emission array. |
| Use: Manufacturing method for semiconductor. |
| Advantage: Suppresses the electron emission from the gate, and reduces the field concentrators associated with sharp corners at the gate since a damascene gate is integrated into the device structure. |
| Novelty: The manufacturing method involves etching an annular isolation trench through the polysilicon etch stop film and top silicon oxide film. A silicon nitride layer is deposited, and an annular recess (92) is etched through the silicon nitride layer. The annular recess is deepened by anisotropically etching the polysilicon etch-stop, and the top silicon oxide film is etched through the polysilicon-lined annular recess using an isotropic etching process such that an annular cavity with rounded cross section forms in the top silicon oxide film. |
| Filed: 3/6/2015 |
| Application Number: US14640655A |
| Tech ID: SD 11407.3 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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