Photovoltaic cell with nano-patterned substrate
| DWPI Title: Photovoltaic solar cell for use in photovoltaic power generation system, has set of heterojunctions formed between n-type semiconductor layer and p-type semiconductor layer including pseudomorphic crystal structure |
| Abstract: A photovoltaic solar cell comprises a nano-patterned substrate layer. A plurality of nano-windows are etched into an intermediate substrate layer to form the nano-patterned substrate layer. The nano-patterned substrate layer is positioned between an n-type semiconductor layer composed of an n-type semiconductor material and a p-type semiconductor layer composed of a p-type semiconductor material. Semiconductor material accumulates in the plurality of nano-windows, causing a plurality of heterojunctions to form between the n-type semiconductor layer and the p-type semiconductor layer. |
| Use: Photovoltaic solar cell for use in a photovoltaic power generation system. |
| Advantage: The cell enhances efficiencies of a nano-patterned substrate arranged amongst junctions between semiconductor materials by reducing defects in crystal structures of semiconductor materials. The cell reduces formation of crystallographic defects at pseudomorphic growth, thus decreasing amount of lost carriers and enhancing voltage, current and efficiency of the cell. The cell minimizes distance between nano-windows to increase an active area. The cell utilizes a graded material to enhance current collection, reduce lattice mismatch between the n-type and p-type semiconductor layers, respectively. |
| Novelty: The cell (100) has an n-type semiconductor layer (104) provided with an n-type semiconductor material. A p-type semiconductor layer (110) is provided with a p-type semiconductor material. One of the n-type or p-type semiconductor layer is a single, continuous semiconductor body that lies over a buried mask layer. A set of heterojunctions is formed between the n-type semiconductor layer and the p-type semiconductor layer and formed at a respective one of interfaces, where the p-type semiconductor layer includes a pseudomorphic crystal structure. |
| Filed: 11/19/2012 |
| Application Number: US13681157A |
| Tech ID: SD 12202.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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