Microstructured silicon radiation detector

DWPI Title: Semiconductor diode radiation detector for radiation of at least one type, has one or more charge-collection electrodes arranged to collect current generated when secondary particles enter silicon body through walls of pores
Abstract: A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion regions. One or more charge-collection electrodes are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 μm or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.
Use: Semiconductor diode radiation detector for radiation of at least one type, such as neutron and gamma ray.
Advantage: The radiation detector is adaptable for, among other things, gamma-ray or neutron detection, and offers the potential for high sensitivity in a rugged and compact package.
Novelty: The radiation detector comprises a silicon body in which are defined vertical pores (130,140) filled with a converter material (160) and situated within silicon depletion regions. One or more charge-collection electrodes (172,174) are arranged to collect current generated when secondary particles enter the silicon body through walls of the pores. The pores are disposed in low-density clusters, have a majority pore thickness of 5 micrometers or less, and have a majority aspect ratio, defined as the ratio of pore depth to pore thickness, of at least 10.
Filed: 8/11/2014
Application Number: US14456934A
Tech ID: SD 11707.0
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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