Vertical III-nitride thin-film power diode

DWPI Title: Method for fabricating vertical III-nitride thin-film power diode, involves exposing high-doped bottom layer through growth substrate and template layer to light source for causing bottom layer to heat and separate from layer and substrate
Abstract: A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a wider bandgap template layer and growth substrate, which can be removed by laser lift-off of the epitaxial device layers grown thereon.
Use: Method for fabricating a vertical III-nitride thin-film power diode.
Advantage: The method enables avoiding conduction of electricity between the template layer and growth substrate, so that the template layer and growth substrate can be removed to enable vertical device operation. The method enables fabricating the diode with an edge termination structure comprising guard rings or junction termination extensions so as to avoid edge and surface breakdown, while reducing leakage current regardless of voltage when reverse-biased.
Novelty: The method involves growing a top contact on a low-doped n-type aluminum gallium nitride drift layer. A host substrate is bonded to the top contact. A high-doped n-type aluminum gallium nitride bottom layer is exposed through a growth substrate and a template layer to a light source having energy greater than band-gap energy of the high-doped n-type bottom layer and less than band-gap energies of the template layer and the growth substrate for causing the high-doped n-type bottom layer to heat and separate from the template layer and growth substrate due to difference in thermal expansion.
Filed: 12/2/2015
Application Number: US14957012A
Tech ID: SD 13636.0
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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