Modification of electrical properties of topological insulators

DWPI Title: Method for modifying electrical properties of topological insulator, involves ion implanting topological insulator with dopant that compensates for bulk charge carriers
Abstract: Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.
Use: Method for modifying electrical properties of topological insulator.
Advantage: The direct implantation of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. The grazing incidence geometry allows one to examine structural variations as a function of depth by precisely controlling incident angle and therefore the penetration depth of X-rays.
Novelty: The method involves providing a topological insulator having finite bulk conductivity due to bulk charge carriers. The topological insulator is ion implanted with a dopant that compensates for bulk charge carriers. The topological insulator comprises bismuth selenide, p-type dopant comprises calcium, semimetal chalcogenide, bismuth telluride, antimony telluride, or bismuth antimony tellurium selenide. The semimetal comprises bismuth, antimony, lead, tin, germanium, or thallium. The semimetal chalcogenide comprises selenium, tellurium, or sulfur.
Filed: 6/8/2016
Application Number: US15177215A
Tech ID: SD 13396.1
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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