Diode and method of making the same

DWPI Title: Power diode used in electrical devices, lower layer conformed to spread electrical field created when power diode is operated under reverse bias away from island region and toward outer boundary of power diode
Abstract: A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.
Use: Power diode used in electrical devices.
Advantage: The threshold voltage for the reverse breakdown is increased, by spreading an electrical field formed during reverse voltage over larger surface area within semiconductor diode.
Novelty: The diode has a first and second layer of semiconductor materials (105, 110) doped to exhibit a first conductivity type. A first and second ohmic contact coupled to the first and second layers. A junction termination extension region mounted over the second layer to surround the island region. The lower layer is a layer of semiconductor material doped to exhibit the second conductivity type. The lower layer conformed to spread an electrical field created when the power diode is operated under reverse bias away from the island region and toward an outer boundary of the power diode.
Filed: 5/27/2016
Application Number: US15166783A
Tech ID: SD 13645.0
This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention.
Data from Derwent World Patents Index, provided by Clarivate
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