Superlattice photodetector having improved carrier mobility
| DWPI Title: Photo detector for use in communication and power generation applications, has super lattice that overlays substrate, in which electrical contacts are connected on opposing sides of super lattice for electrical conduction of carriers |
| Abstract: In a superlattice (SL) photodetector, each period of the SL includes first and second semiconductor layers having different compositions, at least one of which comprises indium arsenide (InAs). At least one of these two semiconductor layers has a graded composition. In embodiments, the first semiconductor layer comprises InAs and the second semiconductor layer is a graded layer comprising indium arsenide antimonide (InAsSb), wherein the antimony (Sb) concentration is varied. In examples, the Sb concentration in the second layer gradually increases from the top and bottom toward the middle of the layer. |
| Use: Photodetector for use in the communication, imaging and power generation applications. |
| Advantage: The performance of photo detector is improved. The carrier mobility is enhanced within the super lattice. The quantum efficiency of photo detector is improved by enhancing the electron mobility and hole mobility. |
| Novelty: The photo detector comprises a super lattice that overlays the substrate (100). Multiple periods are stacked in a vertical direction. The electrical contacts are connected on opposing sides of the super lattice for electrical conduction of photo-generated carriers between the electrical contacts in a vertical direction. The semiconductor layers (140) are different in composition. The semiconductor layer has a top side distal substrate and a bottom side proximal substrate. The semiconductor layers has a graded composition. The semiconductor layer has a central portion. |
| Filed: 4/4/2017 |
| Application Number: US15479134A |
| Tech ID: SD 13604.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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