Device and methods for writing and erasing analog information in small memory units via voltage pulses
| DWPI Title: Analog memory system for non-volatile analog data storage, has source layer from which potential-carrier lithium ions is migrated to storage layers responsive to voltage applied between source layer and respective storage layers |
| Abstract: Devices and methods for non-volatile analog data storage are described herein. In an exemplary embodiment, an analog memory device comprises a potential-carrier source layer, a barrier layer deposited on the source layer, and at least two storage layers deposited on the barrier layer. The memory device can be prepared to write and read data via application of a biasing voltage between the source layer and the storage layers, wherein the biasing voltage causes potential-carriers to migrate into the storage layers. After initialization, data can be written to the memory device by application of a voltage pulse between two storage layers that causes potential-carriers to migrate from one storage layer to another. A difference in concentration of potential carriers caused by migration of potential-carriers between the storage layers results in a voltage that can be measured in order to read the written data. |
| Use: Analog memory system for non-volatile analog data storage. |
| Advantage: The potential-carriers generally migrate only in response to applied voltage pulses, and so data is maintained in storage without requiring continuous power consumption due to the presence of the barrier layer. The barrier layer prevents migration of potential-carriers from the potential-carrier source layer to the storage layers, or from one storage layer to another. A data resolution of the analog memory device is improved by improving control of the input voltage pulse or improving measurement resolution of a device or component used to measure the voltage between the storage layers. |
| Novelty: The system has storage layers in which second storage layer is physically separated from a first storage layer. Potential-carrier lithium ions migrate from the first storage layer to the second storage layer by way of a barrier layer (104) responsive to a voltage pulse applied between the first storage layer and the second storage layer. The barrier layer is deposited on a potential source layer (102). The potential-carrier ions migrate from the source layer to the first and second storage layers responsive to a voltage applied between the source layer and the respective storage layers. |
| Filed: 10/6/2016 |
| Application Number: US15287552A |
| Tech ID: SD 13791.0 |
| This invention was made with Government support under Contract No. DE-NA0003525 awarded by the United States Department of Energy/National Nuclear Security Administration. The Government has certain rights in the invention. |
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